Effect of Fe on the conduction band of HgSe
- 15 August 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (6) , 4120-4126
- https://doi.org/10.1103/physrevb.38.4120
Abstract
A systematic analysis of the de Haas–van Alphen oscillations in Se for 0.0005≲x≲0.05 is presented. Measurements of the Dingle temperature show anomalously low values with a minimum for x∼0.001, a result consistent with prior mobility measurements. Effective-mass measurements and spectral analysis of the oscillations indicate that, for x≤0.03, Fe does not induce gross modifications to the conduction-band structure. It is also found that the addition of Fe reduces the inversion asymmetry splitting of the conduction band, particularly when x≳0.02. .AE
Keywords
This publication has 16 references indexed in Scilit:
- Reduction of charge-center scattering rate inSePhysical Review B, 1987
- Location of the Fe2+(3d6) donor in the band structure of mixed crystals Hg1-vCdvSeJournal of Physics C: Solid State Physics, 1986
- Angular dependence of the quantum oscillations in the diluted magnetic semiconductor SePhysical Review B, 1986
- DINGLE TEMPERATURE IN HgSeLe Journal de Physique Colloques, 1978
- Effect of uniaxial stress on Shubnikov-de Haas oscillations in HgSePhysical Review B, 1974
- Band Structure of HgSe: Band Parameter Determinations from Effective-Mass Data, and Concentration Dependence and Anisotropy of Beating Effects in the Shubnikov-de Haas OscillationsPhysical Review B, 1971
- Relativistic Energy Bands of HgTe and HgSePhysica Status Solidi (b), 1971
- Band structure of HgSe and HgTePhysica Status Solidi (b), 1970
- Screening-Enhanced Shubnikov-de Haas Oscillations in Sb-Doped Gray TinPhysical Review Letters, 1967
- Ionized Impurity Scattering in Degenerate Many-Valley SemiconductorsPhysical Review B, 1964