Growth of InP layers by vacuum chemical epitaxy (VCE)
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (4) , 759-764
- https://doi.org/10.1016/0022-0248(89)90315-1
Abstract
No abstract availableKeywords
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- Electron mobility and free-carrier absorption in InP; determination of the compensation ratioJournal of Applied Physics, 1980