The effect of gas atmospheres on resistivity of indium tin oxide films at high temperature
- 1 February 1990
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 25 (2) , 1403-1406
- https://doi.org/10.1007/bf00585457
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Indium-tin-oxides (ITO) thick films for solar cellsSolar Energy Materials, 1986
- Preparation and characterization of indium tin oxide films produced by the d.c. sputtering techniqueThin Solid Films, 1985
- Three-step process for depositing indium-tin oxide coatingsApplied Optics, 1984
- Lamellar and Grain Boundary Models for the Electrical Properties of Post-Oxidized ITO FilmsJapanese Journal of Applied Physics, 1983
- Electrical properties of post-oxidized In2O3:Sn filmsThin Solid Films, 1981
- In2O3 : (Sn) and SnO2 : (F) films - application to solar energy conversion part II — Electrical and optical propertiesMaterials Research Bulletin, 1979
- In2O3:(Sn) and SnO2:(F) films — Application to solar energy conversion; part 1 — Preparation and characterizationMaterials Research Bulletin, 1979
- The effect of tin additions on indium oxide selective coatingsJournal of Physics D: Applied Physics, 1978
- Effects of heat treatment on the optical and electrical properties of indium–tin oxide filmsJournal of Applied Physics, 1978
- Structural aspects and defect chemistry in In2O3Journal of Solid State Chemistry, 1977