Directional dependence of boundary-scattering mean free path of phonons in germanium and silicon

15 March 1979

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 19 (6) , 3133-3136
https://doi.org/10.1103/physrevb.19.3133

Abstract

The thermal conductivity of some polished samples of germanium and silicon has been analyzed in the boundary-scattering region. It is found that by considering the specularity factor, which appears in the corrected mean free path of phonons, to be dependent on the frequency and angle of incidence of the phonon under consideration, one can successfully explain the thermal conductivity of polished samples of germanium and silicon at low temperatures.

Keywords

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