Photo-oxidation of germanium nanostructures deposited by the cluster-beam evaporation technique
- 1 February 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (3) , 1518-1521
- https://doi.org/10.1063/1.363917
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Photoluminescence study on Oxygen-containing silicon nanostructuresNanostructured Materials, 1995
- Tetragonal germanium flims deposited by the cluster-beam evaporation techniqueApplied Physics Letters, 1995
- Luminescence and structural study of porous silicon filmsJournal of Applied Physics, 1992
- Visible Photoluminescence from Si Microcrystals Embedded in SiO2 Glass FilmsJapanese Journal of Applied Physics, 1992
- Optical properties of GeO x thin filmsJournal of Materials Science Letters, 1989
- On photooxidation of Ge in obliquely deposited Ge and Ge25X75(X = S, Se, Te) thin filmsSolid State Communications, 1989
- Electron-active silicon oxidationApplied Physics A, 1988
- Near Ultraviolet-Visible-Near Infrared Optical Behavior of Sputter Deposited GeOxDefect and Diffusion Forum, 1987
- Preferential sputtering of oxides: A comparison of model predictions with experimental dataApplied Surface Science, 1986
- Band structure and optical properties of intrinsic tetragonal dioxides of groups-IV elementsJournal of Physics and Chemistry of Solids, 1975