A more efficient approach for Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In this paper we report new approach for the Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon with greatly improved efficiency. This approach has been successfully implemented in the UT Monte Carlo code (UT-MARLOWE). A time saving of up to 212X has been observed with a 4-stage simulation. A simulation of arsenic implants with 15 keV implant energy typically takes about 12 minutes on a workstation.<>Keywords
This publication has 1 reference indexed in Scilit:
- Monte Carlo simulation of boron implantation into single-crystal siliconIEEE Transactions on Electron Devices, 1992