Anisotropic piezoelectric effect in lateral surface superlattices
- 17 February 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (7) , 871-873
- https://doi.org/10.1063/1.118301
Abstract
We have studied the potential induced by lateral surface superlattices deposited on a GaAs/AlGaAs heterostructure as a function of bias and orientation of the gates. By using the gates to null the total potential, we extracted the contribution to this potential in the absence of gate bias. Its angular dependence shows that it is dominated by strain from the gates coupled to the electrons by the piezoelectric effect.Keywords
This publication has 10 references indexed in Scilit:
- Electron transport in shallow heterostructures with AlGaAs and AlAs barriersSemiconductor Science and Technology, 1995
- Effects of small-angle scattering on Weiss oscillations in a GaAs lateral superlatticePhysical Review B, 1995
- Anharmonic periodic modulation in lateral surface superlatticesSurface Science, 1994
- Theory of potential modulation in lateral surface superlatticesPhysical Review B, 1994
- Potential modulation under lateral surface superlatticesSuperlattices and Microstructures, 1994
- Magnetic breakdown of a two-dimensional electron gas in a periodic potentialPhysical Review B, 1991
- Guiding-center-drift resonance in a periodically modulated two-dimensional electron gasPhysical Review Letters, 1989
- Magnetoresistance Oscillations in a Two-Dimensional Electron Gas Induced by a Submicrometer Periodic PotentialEurophysics Letters, 1989
- Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructuresApplied Physics Letters, 1988
- Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristicsIEEE Transactions on Electron Devices, 1984