Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- 1 December 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (12S) , 6788-6791
- https://doi.org/10.1143/jjap.37.6788
Abstract
A high-performance electron beam nanolithography system with an overlay accuracy of better than 10 nm has been developed and applied to nanodevice fabrication. Owing to the suppression of charge-up and precise beam position control by taking into account stage position error as well as improvements in other factors, we have obtained a stable beam (< 2 nm/5 min.), the exposure position reproducibility with stage movement (< 3 nm/500 times), and high mark-locating accuracy (3 nm). The resulting overlay accuracy is 6–9 nm in |mean|+2σ. Using this system, we have made multi-island single-electron devices with fine gates overlaid on the Si islands within a 10-nm error. The high overlay accuracy in electron beam nanolithography will allow the study of highly functional single-electron devices.Keywords
This publication has 7 references indexed in Scilit:
- Si nanostructures formed by pattern-dependent oxidationMicroelectronic Engineering, 1998
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam NanolithographyJapanese Journal of Applied Physics, 1997
- Improved resolution in field-emission lithography machinesPublished by SPIE-Intl Soc Optical Eng ,1996
- Size dependence of the characteristics of Si single-electron transistors on SIMOX substratesIEEE Transactions on Electron Devices, 1996
- Si nanostructures fabricated by electron beam lithography combined with image reversal process using electron cyclotron resonance plasma oxidationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Fabrication of sub-10-nm silicon lines with minimum fluctuationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Fabrication technique for Si single-electron transistoroperating at room temperatureElectronics Letters, 1995