A photoemission study of 4HSiC(0001)
- 10 July 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 360 (1-3) , L483-L488
- https://doi.org/10.1016/0039-6028(96)00702-9
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- LEED structure determination of hexagonal α-SiC surfacesSurface Science, 1995
- Scanning tunnelling microscopy on the 6H SiC(0001) surfaceSurface Science, 1994
- Stepped structure of 6H silicon carbide vicinal surfacesJournal de Physique I, 1994
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- Scanning tunneling microscopy and spectroscopy of cubic β-SiC(111) surfacesSurface Science, 1991
- Photoemission spectroscopy at MAX‐LabSynchrotron Radiation News, 1991
- Crystal-field splitting and charge flow in the buckled-dimer reconstruction of Si(100)2×1Physical Review Letters, 1991
- Surface structure and composition of β- and 6H-SiCSurface Science, 1989
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- LEED and Auger electron observations of the SiC(0001) surfaceSurface Science, 1975