A morphological and structural study of SiC layers obtained by LPCVD using tetramethylsilane
- 1 March 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 110 (3) , 528-542
- https://doi.org/10.1016/0022-0248(91)90290-l
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Mathematical modeling of cold-wall channel CVD reactorsJournal of Crystal Growth, 1989
- Effect of Deposition Parameters on the Strength of CVD β-SiC CoatingsAdvanced Ceramic Materials, 1988
- Growth kinetics of silicon carbide CVDJournal of Crystal Growth, 1988
- Chemical vapour deposition of silicon carbide: An X-ray diffraction studyJournal of Materials Science, 1988
- Gas phase kinetics analysis and implications for silicon carbide chemical vapor depositionJournal of Crystal Growth, 1988
- Chemical vapour deposition of SiC and some of its propertiesJournal of Materials Science Letters, 1986
- Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystalsJournal of Crystal Growth, 1984
- Preparation and properties of 2H SiC crystalsJournal of Crystal Growth, 1982
- Organometallic growth of II–VI compoundsJournal of Crystal Growth, 1981
- The structure of chemical vapor deposited silicon carbideThin Solid Films, 1977