New fabrication technique for nano-MOS transistors with W=25 nm and L=25 nm using only conventional optical lithography
- 4 March 2002
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 61-62, 601-605
- https://doi.org/10.1016/s0167-9317(02)00430-6
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Matching analysis of deposition defined 50-nm MOSFET'sIEEE Transactions on Electron Devices, 1998