Abstract
Tunnel junctions between doped polyacetylene and an oxidized aluminum electrode have been realized with a point contact geometry. The conductance dI(V)dt has been measured and interpretated in relation to the electron density of states of doped polyacetylene and shows predicted features of the metal-insulator transition of doped (CH)x. From our data, numerical energy values are obtained in agreement with the value of the Peierls gap and the midgap soliton band.

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