Diffraction imaging of high quality bismuth silicon oxide with monochromatic synchrotron radiation: Implications for crystal growth
- 2 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 87 (1) , 79-100
- https://doi.org/10.1016/0022-0248(88)90346-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- NBS materials science beamlines at NSLSNuclear Instruments and Methods in Physics Research, 1984
- Synchrotron Radiation TopographyAnnual Review of Materials Science, 1982
- X-Ray Extinction Theory in the Bragg GeometryZeitschrift für Naturforschung A, 1982
- Crystal structure and absolute piezoelectric d14 coefficient in laevorotatory Bi12SiO20The Journal of Chemical Physics, 1979
- The Czochralski growth of optical quality bismuth silicon oxide (Bi12SiO20)Journal of Crystal Growth, 1977
- High-sensitivity read-write volume holographic storage in Bi12SiO20 and Bi12GeO20 crystalsApplied Physics Letters, 1976
- Simulated rotational instabilities in molten bismuth silicon oxideJournal of Crystal Growth, 1976
- The Czochralski growth of Bi12SiO20 crystalsJournal of Crystal Growth, 1974
- Imaging Characteristics of the Itek PROMApplied Optics, 1974
- Polymorphism of bismuth sesquioxide. II. Effect of oxide additions on the polymorphism of Bi2O3Journal of Research of the National Bureau of Standards Section A: Physics and Chemistry, 1964