ESR in the two phases of the magnetic semiconductor GaCr4S 8
- 1 January 1983
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 44 (10) , 393-401
- https://doi.org/10.1051/jphyslet:019830044010039300
Abstract
We present new results obtained from ESR experiments in the paramagnetic and magnetic ordered states of both crystallographic phases of the magnetic semiconductor GaCr4S8. We observe a critical behaviour typical of magnetic phase transitions, resulting in a shift and a broadening of the resonance line as well as a distortion of its shape. These features are discussed and related to the presence of magnetization fluctuationsKeywords
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