Electron temperatures in Si-MOSFETs: Determination from broadband far infrared emission
- 29 February 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 49 (5) , 501-504
- https://doi.org/10.1016/0038-1098(84)90674-4
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Energy loss of warm electrons at the interface of (100) silicon MOSFETSSurface Science, 1982
- Phonon-Limited Electron Mobility in Si(100) Inversion Layer at Low TemperaturesJournal of the Physics Society Japan, 1981
- Far infrared cyclotron emission in semiconductorsJournal of Magnetism and Magnetic Materials, 1979
- Hot electron energy relaxation in quantizing magnetic fieldsSolid-State Electronics, 1978
- Far infrared emission from hot electrons in Si-Inversion layersSolid-State Electronics, 1978
- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970