FIR and transport properties of II–VI narrow gap semiconductors in high magnetic fields
- 1 February 1993
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 184 (1-4) , 432-440
- https://doi.org/10.1016/0921-4526(93)90393-k
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Narrow-gap semimagnetic semiconductorsPublished by Springer Nature ,2008
- Non-resonant optical spectroscopy on Hg(Fe)SePhysica B: Condensed Matter, 1992
- Zero-gap semiconductors with magnetic impurities forming resonance donor statesSoviet Physics Uspekhi, 1992
- Transport Phenomena in Mixed‐Valence Zero‐Gap Semimagnetic HgFeSe SemiconductorsPhysica Status Solidi (b), 1991
- Phase-sensitive detection of magnetoresistivity by the four-probe technique in pulsed high magnetic fieldsJournal of Physics E: Scientific Instruments, 1989
- Chapter 5 Band Structure and Quantum Transport Phenomena in Narrow-Gap Diluted Magnetic SemiconductorsPublished by Elsevier ,1988
- Formation of a superlattice of ionized resonant donors or acceptors in semiconductorsSolid State Communications, 1986
- Spin Superlattice with Tunable MinigapPhysical Review Letters, 1982
- "Spin-Doping," a New Tool in Electronic Band Structure InvestigationPhysical Review Letters, 1981
- Band Structure of Gray TinPhysical Review Letters, 1963