Hybrid multiple diffraction in Renninger scan for heteroepitaxial layers
- 1 September 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (5) , 2589-2593
- https://doi.org/10.1063/1.349367
Abstract
In this paper, we report the successful observation of the hybrid multiple diffraction (hybrid MD) in Renninger scans (RS) [M. Renninger, Z. Kristallogr. 106, 141 (1937)]. These diffractions occur when the beam first diffracted by an inclined layer (or substrate) plane with respect to the sample surface crosses the interface layer/substrate to be rescattered by another substrate (or layer) plane towards the detector. The construction of an incidence diagram allows to establish the occurrence of the hybrid MD for heteroepitaxial layers. The layer imperfection (mosaic spread) is used to explain these extra features in RS together along the normal MD features. The case of a GaAs layer grown on a Si substrate is investigated.This publication has 6 references indexed in Scilit:
- Simulation of hybrid reflections in X-ray multiple diffraction experimentsJournal of Crystal Growth, 1991
- Modulation of Renninger scan intensity: A new x-ray technique to characterize epitaxial structuresApplied Physics Letters, 1987
- X-ray multiple diffraction as a tool for studying heteroepitaxial layersJournal of Crystal Growth, 1981
- The geometry of X-ray multiple diffraction in crystalsActa Crystallographica Section A, 1971
- Simultaneous reflections and the mosaic spread in a crystal plateActa Crystallographica Section A, 1969
- Simultaneous diffraction. Indexing unweganregung peaks in simple casesActa Crystallographica, 1962