Low-temperature preparation of BaTiO3 thin films by intense, pulsed, ion beam evaporation

Publisher Website
Google Scholar
Abstract
Cubic barium titanate (BaTiO3) thin films have been prepared in situ, on a low-temperature substrate, Al/SiO2/Si(100), by intense, pulsed ion beam evaporation. We have first proposed a new deposition configuration, backside deposition, which, in comparison with standard frontside deposition, produces very smooth thin films, Rα (mean roughness) ≈ 3 ∼ 9 nm, without any droplets. There is no significant change of the dielectric constant in the frequency range of 10 ∼ 105 Hz. The dielectric constant for the film deposited at the substrate temperature of 200˚C is typically ∼90 at 1 kHz.