Fabrication of SiC Films on Si(100) using a C 60 molecularsource
- 9 June 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (12) , 1007-1008
- https://doi.org/10.1049/el:19940683
Abstract
70 nm thick SiC films have been fabricated on Si(100) wafers under ultrahigh vacuum conditions, by depositing C60 molecules on substrates held at 900 °C. The composition and morphology of the films have been measured using infra-red spectroscopy and atomic force microscopy.Keywords
This publication has 3 references indexed in Scilit:
- The FullerenesPublished by Cambridge University Press (CUP) ,1993
- Observation of C60 cage opening on Si(111)-(7×7)Applied Physics Letters, 1993
- Solid C60: a new form of carbonNature, 1990