Investigation of crystal defects in gaas by X-ray topography and SEM transmission cathodoluminescence
- 30 September 1983
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 9 (1-3) , 321-328
- https://doi.org/10.1016/0254-0584(82)90031-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Evaluation of defects in InP and InGaAsP by transmission cathodoluminescenceJournal of Applied Physics, 1979
- Transmission cathodoluminescence: A new SEM technique to study defects in bulk semiconductor samplesApplied Physics Letters, 1979
- Radiative recombination from GaAs directly excited by electron beamsSolid State Communications, 1964