Hydrogenation of silicon nitride and silicon oxynitride films deposited by reactive sputtering: Optical properties
- 16 March 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 100 (1) , K87-K92
- https://doi.org/10.1002/pssa.2211000164
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- The role of hydrogen in silicon nitride and silicon oxynitride filmsThin Solid Films, 1985
- In-gap optical absorption of amorphous Si3N4Applied Physics Letters, 1984
- Electronic structure of hydrogenated and unhydrogenated amorphous: A photoemission studyPhysical Review B, 1984
- Low temperature plasma chemical vapor deposition of silicon oxynitride thin-film waveguidesApplied Optics, 1984
- Gap states in silicon nitrideApplied Physics Letters, 1984
- Optical constants of rf sputtered hydrogenated amorphous SiPhysical Review B, 1979
- Optical properties, band gap, and surface roughness of Si3N4Physica Status Solidi (a), 1977
- Weak Absorption Tails in Amorphous SemiconductorsPhysical Review B, 1972
- Determination of the Refractive Index of Thin Dielectric Films*Journal of the Optical Society of America, 1964