Control of Thickness Variation in Si-on-Insulator Bonded Wafers by Applying Voltage during KOH Etching
- 1 January 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (1B) , L71-73
- https://doi.org/10.1143/jjap.35.l71
Abstract
A new thinning technique is developed to control thickness variation in Si-on-insulator (SOI) bonded wafers. During KOH etching, voltage is applied between the supporting substrate and the etchant. Excellent SOI thickness variation of less than ±0.1 µm is achieved by etching 4±0.5 µm thick, 150 mmφ SOI bonded wafers. The resulting film thickness after etching is controlled from 0.8 to 2.6 µm by changing the applied voltage from 50 to 75 V.Keywords
This publication has 5 references indexed in Scilit:
- Simulation and two-dimensional analytical modeling of subthreshold slope in ultrathin-film SOI MOSFETs down to 0.1 mu m gate lengthIEEE Transactions on Electron Devices, 1993
- Wafer bonding technology for silicon-on-lnsulator applications: A reviewJournal of Electronic Materials, 1992
- Silicon on insulator material by Wafer BondingJournal of Electronic Materials, 1991
- Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: II . Influence of DopantsJournal of the Electrochemical Society, 1990
- Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation LayersJournal of the Electrochemical Society, 1990