The trap distribution and the luminescence band in ZnIn2S4
- 16 May 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 95 (1) , K47-K51
- https://doi.org/10.1002/pssa.2210950156
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- On the radiative recombination in ZnIn2S4Physica Status Solidi (a), 1985
- Localized levels and luminescence of ab2x4 semiconducting compoundsMaterials Chemistry and Physics, 1984
- The peculiarities of ZnIn2S4 luminescenceIl Nuovo Cimento D, 1983
- Recombination process of photoexcited carriers in ZnIn2 S4Physica Status Solidi (a), 1977
- Trap distribution in ZnIn2S4from photoconductivity analysisJournal of Physics D: Applied Physics, 1976
- Optical transitions and distribution of localized levels in ZnIn2S4Physica Status Solidi (a), 1976
- Recombination centres and traps in ZnIn2S4Journal of Luminescence, 1975
- Optical properties of a ‘quasi-disordered’ semiconductor: ZnIn2S4Solid State Communications, 1973
- Properties of the Ternary Compound ZnIn2S4 at High Electric FieldJournal of Applied Physics, 1971
- Determination of Electron Trapping ParametersJournal of Applied Physics, 1966