Eddy current sensor concepts for the Bridgman growth of semiconductors
- 1 March 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 172 (3-4) , 303-312
- https://doi.org/10.1016/s0022-0248(96)00495-2
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Simulation of the eddy current sensing of gallium arsenide Czochralski crystal growthJournal of Crystal Growth, 1993
- Interface shape observation and calculation in crystal growth of CdTe by the vertical Bridgman methodJournal of Crystal Growth, 1992
- Eddy current responses of an encircling sensor in a Czochralski silicon crystal pullerJournal of Crystal Growth, 1989
- Eddy current measurement of crystal axial thermal profiles during Czochralski silicon crystal growthJournal of Crystal Growth, 1988
- Eddy current monitoring system and data reduction protocol for Czochralski silicon crystal growthJournal of Crystal Growth, 1988
- On control of the crystal-melt interface shape during growth in a vertical bridgman configurationJournal of Crystal Growth, 1985
- Radial segregation induced by natural convection and melt/solid interface shape in vertical bridgman growthJournal of Crystal Growth, 1983
- Effect of variable thermal conductivity on isotherms in Bridgman growthJournal of Crystal Growth, 1983
- Influence of insulation on stability of interface shape and position in the vertical Bridgman-Stockbarger techniqueJournal of Crystal Growth, 1980
- Control of interface shape in the vertical bridgman-stockbarger techniqueJournal of Crystal Growth, 1974