X-ray and SEM investigation of crystal defects in N-type, P-type and semi-insulating GaAs
- 1 September 1985
- journal article
- condensed matter
- Published by Springer Nature in Acta Physica Hungarica
- Vol. 57 (3-4) , 251-261
- https://doi.org/10.1007/bf03158896
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Room temperature transmission cathodoluminescence study of dislocations in semi-insulating GaAs single crystalsJournal of Crystal Growth, 1983
- Investigation of crystal defects in gaas by X-ray topography and SEM transmission cathodoluminescenceMaterials Chemistry and Physics, 1983
- Evaluation of defects in InP and InGaAsP by transmission cathodoluminescenceJournal of Applied Physics, 1979
- Transmission cathodoluminescence: A new SEM technique to study defects in bulk semiconductor samplesApplied Physics Letters, 1979
- Scanning electron microscope studies of electroluminescent diodes of GaAs and GaPPhysica Status Solidi (a), 1973
- Radiative recombination from GaAs directly excited by electron beamsSolid State Communications, 1964