Effect of a transverse magnetic field on resonant magnetization tunneling in high-spin molecules
Open Access
- 15 April 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (8) , 3978-3980
- https://doi.org/10.1063/1.364912
Abstract
The recent observation of steps at regular intervals of magnetic field in the hysteresis loops of oriented crystals of the spin-10 molecular magnet Mn12O12(CH3COO)16(H2O)4 has been attributed to resonant tunneling between spin states. Here, we investigate the effect on the relaxation rate of applying the magnetic field at an angle with respect to the easy axis of magnetization. We find that the position of the resonances is independent of the transverse component of the field, and is determined solely by the longitudinal component. On the other hand, a transverse field significantly increases the relaxation rate, both on and off resonance. We discuss classical and quantum mechanical interpretations of this effecThis publication has 9 references indexed in Scilit:
- Macroscopic quantum tunnelling of magnetization in a single crystal of nanomagnetsNature, 1996
- Field tuning of thermally activated magnetic quantum tunnelling in Mn 12 − Ac moleculesEurophysics Letters, 1996
- Macroscopic Measurement of Resonant Magnetization Tunneling in High-Spin MoleculesPhysical Review Letters, 1996
- Steps in the hysteresis loops of a high-spin moleculeJournal of Applied Physics, 1996
- Mesoscopic quantum tunneling of the magnetizationJournal of Magnetism and Magnetic Materials, 1995
- Magnetic bistability in a metal-ion clusterNature, 1993
- Alternating current susceptibility, high field magnetization, and millimeter band EPR evidence for a ground S = 10 state in [Mn12O12(Ch3COO)16(H2O)4].2CH3COOH.4H2OJournal of the American Chemical Society, 1991
- Spin tunnelling: a perturbative approachJournal of Physics A: General Physics, 1991
- Preparation, structure, and magnetic properties of a dodecanuclear mixed-valence manganese carboxylateActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1980