High-dose iron implantation into silicon and metals
- 1 April 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 50 (1-4) , 384-390
- https://doi.org/10.1016/0168-583x(90)90385-8
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Radiation damage and amorphization of silicon by 6 MeV Ni ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Formation of buried epitaxial Co silicides by ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Evidence for fast diffusion of57Fe implanted in cu from depthselective conversion-electron Mössbauer spectroscopy (DCEMS)Hyperfine Interactions, 1983
- Temperature-dependent conversion electron Mössbauer measurements of57Fe implanted in silicon and germaniumPhysica Status Solidi (a), 1979
- Comment on volume-corrected isomer shifts of transition-metal impuritiesPhysical Review B, 1978
- Mossbauer effect study of iron-implanted copper alloys. II. As a function of annealing temperatureJournal of Physics F: Metal Physics, 1978
- Mossbauer effect study of iron-implanted copper alloys. I. As a function of doseJournal of Physics F: Metal Physics, 1978
- Volume-corrected isomer shifts of transition-metal impurities: An orbital electronegativity scalePhysical Review B, 1977
- Mössbauer study of heat treated57Fe implanted siliconPhysica Status Solidi (b), 1976
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969