Electronic structure of surface defects in K0.3MoO3

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Abstract
The nature of defects on the cleavage surface of the quasi-one-dimensional oxide conductor K0.3MoO3 has been studied by angle-resolved photoemission and Auger electron spectroscopy. Defects were created on the (201̄) surface by Ne+ ion bombardment and by photon-stimulated desorption (PSD). The crystal cleaves to expose K atoms on the surface. Initial sputtering of the cleaved surface leads to the disappearance of emission from the Mo 4d states at the Fermi level (EF) and the growth of a well-defined emission feature 2 eV below EF. Continued sputtering leads to the reappearance of emission at EF. We explain this behavior by the sequential removal of K and O, respectively, from the surface, and verify this model by using PSD to selectively create only O vacancies. This model is further verified by measuring work function changes during surface modifications and by the use of Auger spectroscopy.

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