Effect of the Electron-Irradiation-Induced-Contamination of the Etching Process of a Photoresist

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Abstract
Electron-irradiation-induced-contamination interferes with the progress of etching and results in an etch residue. Hydrocarbon molecules from an irradiated photoresist mainly contribute to the growth of a contamination layer. There is a threshold dosage below which no etch residue exists.

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