Room temperature transmission cathodoluminescence study of dislocations in semi-insulating GaAs single crystals
- 1 October 1983
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 63 (2) , 419-422
- https://doi.org/10.1016/0022-0248(83)90235-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Nonuniform photoluminescence intensity distribution on semi-insulating GaAs and effects of Cr and dislocationsApplied Physics Letters, 1983
- One‐Dimensional Photoluminescence Distribution in Semi‐Insulating GaAs Grown by CZ and HB MethodsJournal of the Electrochemical Society, 1982
- Evaluation of Defects in CdTe Using a Simple Cathodoluminescence TechniqueJournal of the Electrochemical Society, 1982
- Transmission cathodoluminescence: A new SEM technique to study defects in bulk semiconductor samplesApplied Physics Letters, 1979
- Radiative recombination from GaAs directly excited by electron beamsSolid State Communications, 1964