On the transition temperature of an excitonic insulator

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Abstract
The dependence of the excitonic insulator transition temperature on the shift in chemical potential due to the presence of various types of impurities (donors, acceptors or normal impurities) and on the change of band masses due to small crystal deformations is investigated in terms of a mathematical parameter, ηp, which involves all these physical factors. It is shown that both in the semiconductor region and in the semi-metal region, the transition temperature is independent of the sign of this parameter but is a maximum when this parameter is zero.

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