An AFM-based surface oxidation process for heavily carbon-doped p-type GaAs with a hole concentration of 1.5×10 21 cm -3
- 1 March 1998
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 66 (7) , S1083-S1087
- https://doi.org/10.1007/s003390051302
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