Generation of Slip Dislocations during Czochralski Growth of Semiconductor Crystals Pullen in a Axis

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Abstract
Ease of slip dislocation generation during Czochralski growth of semiconductor crystals is considered, based on the calculation of the Schmid factor distribution when a tangetial stress is exerted on the round ingot surface. Only three out of twelve slip systems are dominant for glide motion of the dislocations in single crystals. The Burgers vectors are perpendicular to growth direction, and the glide planes are three equivalently inclined {111} planes rather than the (111) plane perpendicular to the growth direction. The results are in good correspondence to the features of slip dislocation generation observed in actual Czochralski-grown semiconductor crystals.