Structure and composition of the c(4×4) reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy
- 22 June 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (25) , 3347-3349
- https://doi.org/10.1063/1.121599
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Optical characterization of surfaces during epitaxial growth using RDS and GIXSJournal of Crystal Growth, 1996
- Investigation of the relationship between reflectance difference spectroscopy and surface structure using grazing incidence X-ray scatteringPhysica Status Solidi (a), 1995
- Structures of the Ga-RichandReconstructions of the GaAs(001) SurfacePhysical Review Letters, 1995
- Determination of the surface structures of the GaAs(001)-(2×4) As-rich phasePhysical Review B, 1995
- GaAsc(4×4) surface structure in organometallic vapor-phase epitaxyPhysical Review B, 1994
- Infrared study of hydrogen adsorbed onc(2×8) and (2×6) GaAs(100)Physical Review Letters, 1994
- Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicinal Substrate Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1994
- Structure of (001) GaAs surfaces during epitaxial growth by organometallic chemical vapor depositionApplied Physics Letters, 1993
- Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor depositionApplied Physics Letters, 1992
- Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyPhysical Review B, 1990