Trajectory split method for Monte Carlo simulation of ion implantation
- 1 November 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing
- Vol. 8 (4) , 402-407
- https://doi.org/10.1109/66.475181
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Three Dimensional Monte Carlo Simulation Of Ion Implantation With Octree Based Point LocationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A more efficient approach for Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Computer studies of the reflection of light ions from solidsPublished by Elsevier ,2002
- Monte Carlo simulation of boron implantation into single-crystal siliconIEEE Transactions on Electron Devices, 1992
- Random and channeled implantation profiles and range parameters for P and Al in crystalline and amorphized SiJournal of Applied Physics, 1986
- Monte Carlo calculations on hot electron energy tailsApplied Physics Letters, 1977
- A proposed method of calculating displacement dose ratesNuclear Engineering and Design, 1975
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961