A Novel Ge Nanostructure Exhibiting Visible Photoluminescence
- 1 October 1993
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 10 (10) , 630-633
- https://doi.org/10.1088/0256-307x/10/10/016
Abstract
The a-Ge: H/a-SiNx: H multiquantum-well structures were prepared by a computer-controlled plasma enhanced chemical vapor deposition method and then crystallized by Ar+ laser annealing technique. When the Ge well-layer thickness was reduced to 30 Å, the crystallized sample showed a room temperature photoluminescence with a peak at about 2.26 eV. Meanwhile some significant characteristics of such a novel Ge nanostructure were also revealed by x-ray diffraction. Possible mechanisms of this visible PL phenomenon have been discussed.Keywords
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