Properties of buried insulating layers in silicon formed by high dose implantation at 60 keV
- 1 May 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 32 (1-4) , 440-445
- https://doi.org/10.1016/0168-583x(88)90253-4
Abstract
No abstract availableKeywords
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