Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process
- 28 January 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 209 (2-3) , 509-512
- https://doi.org/10.1016/s0022-0248(99)00607-7
Abstract
No abstract availableKeywords
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