Epitaxial silicon carbide for X-ray detection
- 1 April 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 48 (2) , 232-233
- https://doi.org/10.1109/23.915369
Abstract
We present the first experimental results of X-ray detection and spectroscopy by means of Schottky junctions on epitaxial silicon carbide (SiC). The devices have a junction area of 3 mm/sup 2/ on an n-type 4H-SiC layer 30 /spl mu/m thick with a dopant concentration of 1.8/spl times/10 cm at 300 K, the reverse current density of the best device varies between 2 pA/cm/sup 2/ and 18 pA/cm/sup 2/ as the mean electric field is increased from 40 kV/cm up to 170 kV/cm. The devices have been tested with X and /spl gamma/ rays from /sup 241/Am; the best measured energy resolution is 2.7 keV FWHM at room temperature.Keywords
This publication has 8 references indexed in Scilit:
- SiC electronicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Epitaxial silicon carbide charge particle detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
- Particle detectors based on semi-insulating silicon carbideNuclear Physics B - Proceedings Supplements, 1999
- Development of radiation-hard materials for microstrip detectorsIEEE Transactions on Nuclear Science, 1999
- Simultaneous measurement of neutron and gamma-ray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectorsIEEE Transactions on Nuclear Science, 1999
- Development of a silicon carbide radiation detectorIEEE Transactions on Nuclear Science, 1998
- A method for the determination of the noise parameters in preamplifying systems for semiconductor radiation detectorsReview of Scientific Instruments, 1993
- Semiconductor drift chamber — An application of a novel charge transport schemeNuclear Instruments and Methods in Physics Research, 1984