Epitaxial GaAs p-n junction field-effect transistors
- 1 May 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 56 (5) , 879-880
- https://doi.org/10.1109/PROC.1968.6428
Abstract
Structure and fabrication of single-gate GaAs p-n junction field-effect transistors is described. The devices employ n-type GaAs layers grown epitaxially on semi-insulating substrates of GaAs. Experimental devices indicate a cutoff frequency of approximately 2 GHz. Optimized device geometries promise operation at microwave frequencies as amplifiers and oscillators. Negative resistance oscillations above a field of approximately 3 × 103V/cm have been observed.Keywords
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