Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen

1 July 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 69 (1) , 82-84
https://doi.org/10.1063/1.118127

Abstract

Atomic hydrogen is demonstrated to effectively clean GaAs substrates for subsequent growth of ZnSe by molecular beam epitaxy. Optical fluorescence microscopy is shown to be a useful technique to image nonradiative defects related to stacking faults. While the density of stacking faults in ZnSe films grown using conventional thermal cleaning is greater than 107 cm−2, stacking fault densities lower than 104 cm−2 are obtained using atomic hydrogen cleaning. Low-temperature photoluminescence spectra of undoped ZnSe are dominated by excitonic transitions for the low defect density samples in contrast to the high level of defect-related emission from high defect density samples.

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