Technology and metrology of new electronic materials and devices
- 1 January 2007
- journal article
- review article
- Published by Springer Nature in Nature Nanotechnology
- Vol. 2 (1) , 25-32
- https://doi.org/10.1038/nnano.2006.142
Abstract
Scaling of the metal oxide semiconductor (MOS) field-effect transistor has been the basis of the semiconductor industry for nearly 30 years. Traditional materials have been pushed to their limits, which means that entirely new materials (such as high-κ gate dielectrics and metal gate electrodes), and new device structures are required. These materials and structures will probably allow MOS devices to remain competitive for at least another ten years. Beyond this timeframe, entirely new device structures (such as nanowire or molecular devices) and computational paradigms will almost certainly be needed to improve performance. The development of new nanoscale electronic devices and materials places increasingly stringent requirements on metrology.Keywords
This publication has 83 references indexed in Scilit:
- Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applicationsApplied Physics Letters, 2005
- Electron transport in very clean, as-grown suspended carbon nanotubesNature Materials, 2005
- A sound barrier for silicon?Nature Materials, 2005
- In Search of “Forever,” Continued Transistor Scaling One New Material at a TimeIEEE Transactions on Semiconductor Manufacturing, 2005
- Band alignment issues related to HfO2∕SiO2∕p-Si gate stacksJournal of Applied Physics, 2004
- Current Status of Ferroelectric Random-Access MemoryMRS Bulletin, 2004
- Depth-Dependent Imaging of Individual Dopant Atoms in SiliconMicroscopy and Microanalysis, 2004
- Thin Dielectric Film Thickness Determination by Advanced Transmission Electron MicroscopyMicroscopy and Microanalysis, 2003
- Dopant mapping for the nanotechnology ageNature Materials, 2003
- Characterization and production metrology of gate dielectric filmsMaterials Science in Semiconductor Processing, 2001