Light scattering by point defects in insulating crystals

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Abstract
We examine the theory of light scattering by point defects in crystals through use of a model which includes scattering induced by the strain field near the defect, in addition to that caused by the change in electronic polarizability within the unit cell which contains it. The model applies to defects with the same valence as the missing host ion. We find the light‐scattering cross section is given by an expression of the Rayleigh form, with overall magnitude influenced by interference between the two mechanisms considered. A rough estimate of the cross section shows, in agreement with recent data, that isoelectronic impurities present in alkali halide crystals at the part‐per‐million level should not influence the Landau‐Placzek ratio.

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