Evidence for a mobility edge in inversion layers. II
- 1 November 1974
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 11 (6) , 962-964
- https://doi.org/10.1116/1.1318714
Abstract
Potential fluctuations in inversion layers at semiconductor-insulator interfaces are expected to give rise to a mobility edge separating localized from delocalized states. Recent experimental and theoretical work on this subject is briefly described.Keywords
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