Process Dependence of Inversion Layer Mobility in 4H-SiC Devices

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 1077-1080
• https://doi.org/10.4028/www.scientific.net/msf.338-342.1077

Abstract

Keywords

• FIELD-EFFECT MOBILITY
• INTERFACE STATES (OR TRAPS)
• METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
• PROCESS