Epitaxial growth of diamond-like films on Si(100) by pulsed-laser evaporation of graphite
- 15 January 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 11 (1-4) , 337-340
- https://doi.org/10.1016/0921-5107(92)90236-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Epitaxial growth of crystalline, diamond-like films on Si (100) by laser ablation of graphiteApplied Physics Letters, 1990
- Subplantation model for film growth from hyperthermal speciesPhysical Review B, 1990
- Amorphic diamond films produced by a laser plasma sourceJournal of Applied Physics, 1990
- Current Issues and Problems in the Chemical Vapor Deposition of DiamondScience, 1990
- Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopySurface Science Reports, 1989
- Growth of thin films by laser-induced evaporationCritical Reviews in Solid State and Materials Sciences, 1988
- Chemically bonded diamondlike carbon films from ion-beam depositionPhysical Review Letters, 1987
- Comparison of the CKLL first-derivative auger spectra from XPS and AES using diamond, graphite, SiC and diamond-like-carbon filmsSurface Science, 1987
- The diamond surface: atomic and electronic structureSurface Science, 1986
- An ISS-XPS study on the oxidation of Al(111); identification of stoichiometric and reduced oxide surfacesSurface Science, 1985