Isotope effects in MNOS transistors

1 January 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (1) , 31-32
https://doi.org/10.1109/EDL.1985.26032

Abstract

This letter presents arguments for the experimental verification of deuterium as the primary agent in forming "effective" traps in hydrogenated silicon nitride layers in metal-nitride oxide semiconductor (MNOS) transistors. Results presented show significant improvement in charge storage as a result of the substitution of deuterium for hydrogen.

Keywords

ISOTOPES
DEUTERIUM
ELECTRON TRAPS
PHOTONIC BAND GAP
IONIZATION
AMORPHOUS SILICON
DIELECTRIC CONSTANT
HYDROGEN STORAGE
ANNEALING
SEMICONDUCTOR FILMS

This publication has 0 references indexed in Scilit: