A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

15 January 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (3) , 418-420
https://doi.org/10.1063/1.116704

Abstract

A Josephson field effect transistor (JOFET) was coupled with a two‐dimensional electron gas in a strained InAs quantum well inserted into an In_0.52Al_0.48As/In_0.53Ga_0.47As inverted modulation‐doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)‐type gate instead of the usual metal‐insulator‐ semiconductor (MIS)‐type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about −1 V; this provides voltage gain over 1 for a JOFET.

Keywords

ALUMINIUM ARSENIDES
CRITICAL CURRENT
DESIGN
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
INDIUM ARSENIDES
IV CHARACTERISTIC
JOSEPHSON JUNCTIONS
QUANTUM WELLS
SUPERCONDUCTING DEVICES

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