Reflectance of silicon carbide in the vacuum ultraviolet
- 14 March 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (3) , 401-404
- https://doi.org/10.1088/0022-3727/14/3/010
Abstract
Silicon carbide may be an ideal mirror material for synchrotron radiation applications. Measurement of reflectance at 45 degrees angle of incidence, with two orientations of the reflector about the optic axis, allowed direct comparison of the reflectivities of various polycrystalline forms of silicon carbide with that of gold. Scanning electron microscopy revealed the surface characteristics of the silicon carbide samples.Keywords
This publication has 7 references indexed in Scilit:
- The angular distribution of photoelectrons from molecular hydrogen as a function of photon energyJournal of Physics B: Atomic and Molecular Physics, 1980
- Total integrated optical scattering in the vacuum ultraviolet: polished CVD SiCApplied Optics, 1977
- SiC, a new material for mirrors 1: High power lasers; 2: VUV applicationsApplied Optics, 1976
- Reflectance and optical constants of evaporated osmium in the vacuum ultraviolet from 300 to 2000 Å*Journal of the Optical Society of America, 1973
- An integrated optical system for the vacuum ultraviolet regionApplied Physics A, 1973
- A Method for Measuring Polarization in the Vacuum UltravioletApplied Optics, 1965
- THE PREPARATION AND PROPERTIES OF SELF-BONDED SILICON CARBIDEPowder Metallurgy, 1961