The use of Lewis acid-base adducts as MOCVD precursors for III-V compounds is described and in particular the use of InMe3.PEt3 for the growth of InP. A simple, small-scale apparatus, which utilises the safety and handleability of these adducts is described. The InP epitaxial layers obtained were of good crystallographic quality with background carrier concentrations down to 2 x 1015 cm-3. The relative advantages of adducts over conventional metal alkyls is discussed, as well as the ideal requirements of metallo-organic sources for MOCVD. The future potential of both the simplified growth system and the adducts is considered